Avalanche multiplication in AlGaN based solar-blind photodetectors
Avalanche multiplication in AlGaN based solar-blind photodetectors
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DOI：
10.1063/1.2140610
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发表时间：
2005-12
影响因子：
4
通讯作者：
R. Mcclintock;A. Yasan;K. Minder;P. Kung;M. Razeghi
中科院分区：
文献类型：
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作者：
R. Mcclintock;A. Yasan;K. Minder;P. Kung;M. Razeghi
雪崩倍增已被观察到在太阳盲algan基p-i-n光电二极管。在紫外线照射下，光学增益显示出从相对较低的电场开始的软击穿，最终饱和而不显示盖革模式击穿。该器件在60 V的反向偏置下实现了700的最大光学增益。通过对器件的建模，发现这对应于1.7MV∕cm的电场强度。
Avalanche multiplication has been observed in solar-blind AlGaN-based p-i-n photodiodes. Upon ultraviolet illumination, the optical gain shows a soft breakdown starting at relatively low electric fields, eventually saturating without showing a Geiger mode breakdown. The devices achieve a maximum optical gain of 700 at a reverse bias of 60 V. By modeling the device, it is found that this corresponds to an electric-field strength of 1.7MV∕cm.