Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate
Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate
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DOI：
10.1063/1.124030
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发表时间：
1999-05-10
影响因子：
4
通讯作者：
Rich, DH
中科院分区：
文献类型：
--
作者：
Kobayashi, NP;Kobayashi, JT;Rich, DH
演示了一种可以在Si衬底上形成的氧化AlAs（AlOx）上横向生长单晶α-GaN的方法。形成由AlOx在空间上分离的规则的α-Ga-2-O-3条带模板，在其上选择性地接种随后的GaN生长。由于条带模板和AlOx之间的边界名义上是平面的，所以分离的GaN上的两个棱锥平面可以通过在AlOx上横向生长（称为平面外延横向过生长）而合并。透射电子显微镜显示，在GaN横向生长的AlOx上的结构缺陷的数量显着减少相比，在GaN上生长的条纹模板，因此，阴极发光揭示了一个强大的带边发射从GaN横向生长的AlOx，这表明这种方法使我们能够生长GaN的Si衬底上的缺陷较少。(C)1999年美国物理学会。[S0003-6951（99）03019-3]。
An approach by which single crystal alpha-GaN can be grown laterally over oxidized AlAs (AlOx) formed on Si substrates is demonstrated. Regular alpha-Ga-2-O-3 stripe templates, spatially separated by AlOx, on which subsequent GaN growth is selectively seeded are formed. Since the boundary between the stripe template and AlOx is nominally planar, two pyramidal planes on separated GaN can merge by growing laterally over the AlOx (referred to as planar epitaxial lateral overgrowth). Transmission electron microscopy reveals that the number of structural defects in GaN laterally grown over the AlOx is remarkably reduced compared to that in GaN grown on the stripe templates, and accordingly cathodoluminescence reveals a strong band edge emission from GaN laterally grown over the AlOx, suggesting that this approach allows us to grow GaN on Si substrates with fewer defects. (C) 1999 American Institute of Physics. [S0003-6951(99)03019-3].