Effects of nonuniformity in thin-film photovoltaics
Effects of nonuniformity in thin-film photovoltaics
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DOI：
10.1063/1.1483118
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发表时间：
2002-05
影响因子：
4
通讯作者：
V. Karpov;A. Compaan;D. Shvydka
中科院分区：
文献类型：
--
作者：
V. Karpov;A. Compaan;D. Shvydka
我们讨论了微不均匀性在薄膜光伏中的物理起源及其影响。关键因素是较大的器件面积以及在晶界（对于多晶薄膜而言）和器件结中存在的势垒。我们根据通过电阻电极并联的随机微二极管来模拟不均匀性的影响。结果表明，低开路电压的微二极管会对宏观大区域产生影响。它们极大地降低了器件性能，并以几种不同的模式导致其不均匀退化。我们通过实验来支持我们的预测，实验表明器件的退化是由光诱导的正向偏置驱动的，并且在空间上是不均匀的。
We discuss the physical origin and effects of micrononuniformities on thin-film photovoltaics. The key factors are the large device area and the presence of potential barriers in the grain boundaries (for polycrystalline films) and in device junctions. We model the nonuniformity effects in the terms of random microdiodes connected in parallel through a resistive electrode. The microdiodes of low open circuit voltages are shown to affect macroscopically large regions. They strongly reduce the device performance and induce its nonuniform degradation in several different modes. We support our predictions by experiments, which show that the device degradation is driven by the light-induced forward bias and is spatially nonuniform.