Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al0.1Ga0.9N/GaN Double Heterostructure
Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al0.1Ga0.9N/GaN Double Heterostructure
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Al0.1Ga0.9N/GaN 双异质结构光泵浦室温低阈值表面受激发射
DOI：
10.1143/jjap.32.l1000
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发表时间：
1993
影响因子：
1.5
通讯作者：
Isamu Akasaki Isamu Akasaki
中科院分区：
文献类型：
--
作者：
H. Amano;Nobuaki Watanabe;N. Koide;Isamu Akasaki Isamu Akasaki
发现GaN和Al0.1Ga0.9N之间在λ=0.37μm附近的折射率差约为0.19。通过使用AlGaN/GaN双异质结构，室温下光泵浦表面受激发射的阈值功率已显着降低至块状GaN层的二十分之一左右。讨论了该系统的受激发射机理。
The difference in the refractive index at around λ=0.37 µm between GaN and Al0.1Ga0.9N is found to be about 0.19. With use of AlGaN/GaN double heterostructures, the threshold power for surface-stimulated emission by optical pumping at room temperature has been markedly decreased to about one-twentieth that of a bulk GaN layer. The mechanism of the stimulated emission in this system is discussed.