Theoretical and Experimental Study of 22 kV SiC Emitter Turn-OFF (ETO) Thyristor
Theoretical and Experimental Study of 22 kV SiC Emitter Turn-OFF (ETO) Thyristor
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DOI：
10.1109/tpel.2016.2616841
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发表时间：
2017-08
影响因子：
6.7
通讯作者：
Xiaoqing Song;A. Huang;Meng-Chia Lee;Chang Peng
中科院分区：
文献类型：
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作者：
Xiaoqing Song;A. Huang;Meng-Chia Lee;Chang Peng
基于碳化硅（SiC）材料的可控三端子高压（$>$10kV）功率开关正获得显著关注，因为硅（Si）功率开关（诸如绝缘栅双极晶体管（IGBT））通常被设计用于低得多的阻断电压。经过30多年的商业发展，在设计具有超过6.5kV额定电压的Si IGBT时存在根本限制。另一方面，SiC功率器件的电压势垒很容易超过10 kV。在本文中，一个世界纪录的22千伏SiC p型发射极可关断（ETO）（p-ETO）晶闸管的报告和分析作为一个有前途的候选人的高压应用，如固态断路器，高压直流，灵活的交流输电系统（FACTS），和电机驱动器。该设备是基于2平方厘米22千伏p型SiC栅极可关断晶闸管（p-GTO）结构。它的静态性能进行了分析，表现出高电压（22 kV）的阻断特性，超低漏电流，和一个低的正向压降（7 V，100 A）的温度范围很广。研究了开关管的开通和关断动态特性。关键的开关特性，如关断存储时间，关断损耗，dv/dt，和di/dt的介绍和分析。此外，还对22 kV SiC ETO的大反向偏置安全工作区（RBSOA）进行了理论分析，并通过仿真和实验测试进行了验证。
Controllable three terminal high voltage ($>$ 10 kV) power switches based on silicon carbide (SiC) material are gaining significant attentions since silicon (Si) power switches such as insulated gate bipolar transistors (IGBTs) are typically designed for much lower blocking voltages. After more than 30 years of commercial development, there is a fundamental limitation in designing Si IGBTs with more than 6.5 kV voltage rating. On the other hand, the voltage barrier for SiC power devices could easily exceed 10 kV. In this paper, a world record 22 kV SiC p-type emitter turn-OFF (ETO) (p-ETO) thyristor is reported and analyzed as a promising candidate for high-voltage applications, such as solid-state circuit breaker, HVdc, flexible alternating current transmission system (FACTS), and motor drives. The device is based on a 2 cm2 22 kV p-type SiC gate turn-off thyristor (p-GTO) structure. Its static performances are analyzed exhibiting a high voltage (22 kV) blocking characteristic, ultralow leakage current, and a low forward voltage drop ( $\sim$7 V at 100 A) for a broad range of temperatures. The dynamic performances including turn-on and turn-off are studied. Key switching characteristics such as turn-off storage time, turn-off loss, dv/dt, and di/dt are presented and analyzed. In addition, the large reverse biased safe operation area (RBSOA) of the 22 kV SiC ETO is theoretically analyzed and verified by simulations and experimental tests.