High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon
High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon
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DOI：
10.1109/jqe.2023.3238754
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发表时间：
2023-04-01
影响因子：
2.5
通讯作者：
Wu, Jiang
中科院分区：
文献类型：
--
作者：
Guo, Daqian;Huang, Jian;Wu, Jiang
在硅平台上单片集成红外光电探测器是开发可扩展且经济实惠的光电探测器和红外焦平面阵列的有前途的解决方案。我们报告了通过直接生长在硅衬底上集成亚单层量子点量子级联探测器（SML QD QCD）。采用高质量的GaAs-on-Si虚拟衬底，螺纹位错密度已降低至接近10(7) cm(-2)的水平。我们还通过透射电子显微镜应变对比图像对 SML QD QCD 进行了形态分析，据我们所知，首次在硅上清晰地观察到了高质量的 InGaAs/GaAs SML QD。 Si 上生长的 SML QD QCD 的光致发光衰减时间经测量约为 300 ps，与晶格匹配 GaAs 基板上的参考 QCD 相当。凭借高质量的 III-V 族外延层和 SML 量子点，Si 上的量子级联探测器在零偏压下实现了高达 160 K 的法向入射光响应温度。
Monolithic integration of infrared photodetectors on a silicon platform is a promising solution for the development of scalable and affordable photodetectors and infrared focal plane arrays. We report on integration of submonolayer quantum dot quantum cascade detectors (SML QD QCDs) on Si substrates via direct growth. Threading dislocation density has been reduced to the level of similar to 10(7) cm(-2) with the high-quality GaAs-on-Si virtual substrate. We also conducted a morphology analysis for the SML QD QCDs through a transmission electron microscope strain contrast image and to the best of our knowledge, high quality InGaAs/GaAs SML QDs were clearly observed on silicon for the first time. Photoluminescence decay time of the as-grown SML QD QCDs on Si was measured to be around 300 ps, which is comparable to the reference QCDs on lattice-matched GaAs substrates. With the high-quality III-V epitaxial layers and SML QDs, the quantum cascade detectors on Si achieved a normal incident photoresponse temperature up to 160 K under zero bias.