Ultrahigh Off‐Resonant Field Effects in Semiconductors
Ultrahigh Off‐Resonant Field Effects in Semiconductors
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DOI：
10.1002/lpor.201700049
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发表时间：
2017-07
影响因子：
11
通讯作者：
U. Huttner;M. Kira;S. Koch
中科院分区：
文献类型：
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作者：
U. Huttner;M. Kira;S. Koch
用短的、非共振的、高功率太赫兹脉冲激励半导体产生极高的非线性、超快的动力学过程，包括极高的谐波产生、高阶边带的出现、动态Bloch振荡以及准粒子碰撞。本文综述了实验结果和用于对观测结果进行一致性定量分析的微观理论。
The excitation of semiconductors with short, off‐resonant, high‐power terahertz pulses yields extremely nonlinear, ultrafast, dynamical processes including very‐high harmonic generation, the occurence of high‐order sidebands, dynamical Bloch oscillations, as well as quasi‐particle collisions. This review overviews the experimental findings and the microscopic theory used for the consistent quantitative analysis of the observations.