Modeling and simulation methods for plasma processing
Modeling and simulation methods for plasma processing
复制标题
等离子体处理的建模和仿真方法
DOI：
10.1147/rd.431.0199
复制
发表时间：
1999
期刊：
影响因子：
--
通讯作者：
S. Hamaguchi
中科院分区：
文献类型：
--
作者：
S. Hamaguchi
综述了半导体集成电路制造中等离子体工艺的建模和数值模拟方法。本文第一部分对连续介质方法和动力学方法进行了综述。作为连续介质模型的一个例子，提出了一个基于漂移扩散方程的模型，并讨论了该模型和相关的数值解。动力学建模最广泛使用的模拟方法是Particle-In-Cell/蒙特-卡罗-碰撞（PIC/MCC）方法，其中等离子体由带电超粒子系统（每个超粒子代表大量离子或电子的集合）建模，这些超粒子在自洽电磁场中移动并通过给定的碰撞截面碰撞。在论文的第二部分中，我们回顾了等离子体刻蚀和沉积中表面形貌演化的建模和模拟。
Methods used for the modeling and numerical simulation of the plasma processes used in semiconductor integrated-circuit fabrication are reviewed. In the first part of the paper, we review continuum and kinetic methods. A model based on the drift-diffusion equations is presented as an example of a continuum model; the model and associated numerical solutions are discussed. The most widely used simulation method for kinetic modeling is the Particle-ln-Cell/Monte-Carlo-Collision (PIC/MCC) method, in which the plasma is modeled by a system of charged superparticles (each of which represents a collection of a large number of ions or electrons) that move in self-consistent electromagnetic fields and collide via given collision cross sections. In the second part of the paper, we review the modeling and simulation of the evolution of surface topography in plasma etching and deposition.