Study of nonlinear absorption in GaAs/AlGaAs multiple quantum wells using the reflection Z-scan
Study of nonlinear absorption in GaAs/AlGaAs multiple quantum wells using the reflection Z-scan
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DOI：
10.1007/s11082-008-9188-7
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发表时间：
2007-11
影响因子：
3
通讯作者：
R. Liu;Yong-chun Shu;Guan-jie Zhang;Jiamin Sun;X. Xing;B. Pi;J. Yao;Zhan-guo Wang;Jingjun Xu
中科院分区：
文献类型：
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作者：
R. Liu;Yong-chun Shu;Guan-jie Zhang;Jiamin Sun;X. Xing;B. Pi;J. Yao;Zhan-guo Wang;Jingjun Xu
用反射Z扫描技术研究了GaAs/AlGaAs多量子阱中的室温三阶非线性。能带填充效应被认为是非线性吸收的主要非线性机制。提出了一种计算非线性区量子阱吸收系数的模型。
The room-temperature third order nonlinearities in GaAs/AlGaAs multiple quantum wells have been studied using reflection Z-scan technique. Band-filling effect is considered to be the major nonlinear mechanism of the nonlinear absorption. A model to calculate the absorption coefficient of quantum wells in the nonlinear regime is presented.