O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy
O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy
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DOI：
10.1063/1.5065527
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发表时间：
2019-01
期刊：
影响因子：
1.6
通讯作者：
Bin Zhang;Wenqi Wei;Jianhuan Wang;Hai-Ling Wang;Zhuang Zhao;Lei Liu;H. Cong;Qi Feng;Huiyun Liu;Ting Wang;Jianjun Zhang
中科院分区：
文献类型：
--
作者：
Bin Zhang;Wenqi Wei;Jianhuan Wang;Hai-Ling Wang;Zhuang Zhao;Lei Liu;H. Cong;Qi Feng;Huiyun Liu;Ting Wang;Jianjun Zhang
近年来，超大规模数据中心的出现推动了集成硅光子学领域的研究。紧凑型光子集成电路的主要挑战之一是硅基激光器。在本文中，我们通过 IV/III-V 混合外延在精确的 Si (001) 到 (111) 面锯齿 Si 空心结构上展示了光泵浦 InAs/GaAs 量子点微柱激光器。 InAs/GaAs量子点微柱的激光阈值低至20 μW，柱直径为15 μm。此外，微柱激光器能够在高达 100 °C 的最高温度下工作。
Recent years, the emergence of hyper-scale data centers boosted the research field of integrated silicon photonics. One of the major challenges for compact photonic integrated circuits is silicon based lasers. In this paper, we demonstrate optically pumped InAs/GaAs quantum-dot micropillar laser on exact Si (001) by (111)-faceted-sawtooth Si hollow structure via IV/III-V hybrid epitaxy. The lasing threshold of InAs/GaAs quantum-dot micropillar is as low as 20 μW with the pillar diameter of 15 μm. Moreover, the micropillar laser is capable of operating at maximum temperature up to 100 °C.