Oxygen Content and Bias Influence on Amorphous InGaZnO TFT-Based Temperature Sensor Performance
Oxygen Content and Bias Influence on Amorphous InGaZnO TFT-Based Temperature Sensor Performance
复制标题
氧含量和偏置对非晶 InGaZnO TFT 温度传感器性能的影响
DOI：
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发表时间：
2019
影响因子：
4.9
通讯作者：
D. Kim
中科院分区：
文献类型：
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作者：
S. Choi;Seohyeon Kim;Jungkyu Jang;Jungmok Kim;D. M. Kim;Sung;H. Mo;Seung Min Lee;D. Kim
介绍了一种基于非晶InGaZnO （A - igzo）薄膜晶体管（TFT）的温度传感器（<inline-formula> < text -math notation="LaTeX"> ${T}$ </ text -math></inline-formula>），并对其性能进行了定量分析。性能分析包括栅极到源偏置（<inline-formula> < text -math notation="LaTeX"> ${V}_{{GS}}$ </ text -math></inline-formula>）、IGZO中氧含量对迁移率（<inline-formula> < text -math notation="LaTeX"> $\mu $ </ text -math></inline-formula>）、阈值电压（<inline-formula> < text -math notation="LaTeX"> ${V}_{T}$ </ text -math></inline-formula>）、漏源电流（<inline-formula> < text -math notation="LaTeX"> ${I}_{\text {DS}}$ </ text -math></inline-formula>）。随着氧含量的降低，传感器的线性度和灵敏度逐渐提高<inline-formula> < text -math notation="LaTeX"> ${V}_{\text {GS}}$ </ text -math></inline-formula>，因为<inline-formula> < text -math notation="LaTeX"> $\partial {I}_{\text {DS}}/\partial {T}$ </ text -math></inline-formula>在数量上由<inline-formula> < text -math notation="LaTeX"> $\mu $ </ text -math></inline-formula> >和（<inline-formula> < text -math notation="LaTeX"> ${V}_{\text {GS}} -{V}_{\text {T}}$ </ text -math></inline-formula>）而不是由<inline-formula> < text -math notation="LaTeX"> $\partial \mu /\partial {T}$ </ text -math></inline-formula>和<inline-formula> < text -math notation="LaTeX"> $- \partial {V}_{\text {T}}/\partial {T}$所主导</ text -math></inline-formula>这表明IGZO TFT在器件/工艺变化的抗扰度方面具有很大的潜力。在低氧和<inline-formula> < text -math notation="LaTeX"> ${V}_{\text {GS}}= {9}$ </ text -math></inline-formula> V条件下，在303-373 K的温度范围内，成功地证明了灵敏度为125 nA/K，分辨率为1.55 K。
A temperature (<inline-formula> <tex-math notation="LaTeX">${T}$ </tex-math></inline-formula>) sensor based on an amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) is demonstrated and its performance is analyzed quantitatively. The performance analysis includes the influences of the gate-to-source bias (<inline-formula> <tex-math notation="LaTeX">${V}_{{GS}}$ </tex-math></inline-formula>) and oxygen content in IGZO on the mobility (<inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>), threshold voltage (<inline-formula> <tex-math notation="LaTeX">${V}_{T}$ </tex-math></inline-formula>), and drain-to-source current (<inline-formula> <tex-math notation="LaTeX">${I}_{\text {DS}}$ </tex-math></inline-formula>) of TFTs. The linearity and sensitivity of the sensor are found to improve with decreasing oxygen content and increasing <inline-formula> <tex-math notation="LaTeX">${V}_{\text {GS}}$ </tex-math></inline-formula>, because <inline-formula> <tex-math notation="LaTeX">$\partial {I}_{\text {DS}}/\partial {T}$ </tex-math></inline-formula> is quantitatively dominated by <inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> and (<inline-formula> <tex-math notation="LaTeX">${V}_{\text {GS}} -{V}_{\text {T}}$ </tex-math></inline-formula>) rather than by <inline-formula> <tex-math notation="LaTeX">$\partial \mu /\partial {T}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$- \partial {V}_{\text {T}}/\partial {T}$ </tex-math></inline-formula>. This indicates that the IGZO TFT has great potential as a temperature sensor in terms of immunity in device/process variation. A sensitivity of 125 nA/K with 1.55 K resolution over a temperature range of 303–373 K was successfully demonstrated in low oxygen and <inline-formula> <tex-math notation="LaTeX">${V}_{\text {GS}}= {9}$ </tex-math></inline-formula> V conditions.