Molecular beam epitaxy growth and characterization of thin (<2 mu m) GaSb layers on GaAs(100) substrates
Molecular beam epitaxy growth and characterization of thin (<2 mu m) GaSb layers on GaAs(100) substrates
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GaAs(100) 衬底上薄层 (<2 μ m) GaSb 的分子束外延生长和表征
DOI：
10.1088/0268-1242/8/3/008
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发表时间：
1993
影响因子：
1.9
通讯作者：
V. Ustinov
中科院分区：
文献类型：
--
作者：
S. Ivanov;P. Altukhov;T. Argunova;A. A. Bakun;A. A. Budza;V. Chaldyshev;Yury A. Kovalenko;P. Kop’ev;R. N. Kutt;B. Meltser;S. Ruvimov;S. V. Shaposhnikov;L. Sorokin;V. Ustinov
本文报道了生长参数和缓冲结构对在 GaAs(100) 衬底上通过分子束外延 (MBE) 生长的薄 (<2 μ m) GaSb 层的发光电学和结构特性的影响。基于生长过程的热力学考虑，开发了两阶段衬底温度生长机制，同时考虑到由于初始生长时的应变而产生的额外吉布斯自由能。这种机制允许在高衬底温度下生长具有小 Sb/Ga 比率的 GaSb 外延层；它提供了更大的激子光致发光 (PL) 强度和霍尔迁移率（77 K 时超过 5000 cm2 V-1 s-1）并提高了层质量。首次报道了MBE GaSb/GaAs PL光谱中出现自由激子发光线（809 meV）。研究还表明，(50 AA AlSb/50 AA GaSb)10 短周期超晶格可防止非辐射复合中心和载流子散射中心在顶部 GaSb 层中传播，但不会弯曲从 GaSb/GaAs 界面穿过该层生长的失配位错。
This paper reports the effect of growth parameters and buffer structure on the luminescence electrical and structural characteristics of thin (<2 mu m) GaSb layers grown by molecular beam epitaxy (MBE) on GaAs(100) substrates. A two-stage substrate temperature growth regime has been developed on the basis of a thermodynamic consideration of the growth process, taking into account the additional Gibbs free energy due to the strain at the initial growth. This regime permits the growth of GaSb epilayers with a small Sb/Ga ratio at high substrate temperatures; it provides a greater exciton photoluminescence (PL) intensity and Hall mobility (over 5000 cm2 V-1 s-1 at 77 K) and improves the layer quality. The appearance of a free exciton luminescence line (809 meV) in the PL spectra of MBE GaSb/GaAs is reported for the first time. It is also shown that a (50 AA AlSb/50 AA GaSb)10 short-period superlattice prevents non-radiative recombination centres and carrier scattering centres from propagating in the top GaSb layer but does not bend the misfit dislocation growing through the layer from the GaSb/GaAs interface.