Proposal for all-electrical measurement of T1 in semiconductors
Proposal for all-electrical measurement of T1 in semiconductors
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DOI：
10.1063/1.1536270
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发表时间：
2002-05
影响因子：
4
通讯作者：
I. Žutić;J. Fabian;S. Sarma
中科院分区：
文献类型：
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作者：
I. Žutić;J. Fabian;S. Sarma
在非磁性掺杂的磁性半导体中，自旋弛豫时间T1可以通过全电测量来确定。在磁性p-n结中注入非平衡自旋引起自旋伏打效应，其中非平衡自旋感应电荷电流对T1非常敏感，并且即使在没有外加偏压的情况下也可以流动。建议T1可以通过测量这种几何结构中的I-V特性来确定。在磁性p-n结中，其结果可以解析计算，也可以提取g因子和注入载流子自旋极化的程度。
In an inhomogeneously-doped magnetic semiconductor, spin relaxation time T1 can be determined by all-electrical measurements. Nonequilibrium spin injected in a magnetic p–n junction gives rise to the spin-voltaic effect, in which the nonequilibrium spin-induced charge current is very sensitive to T1 and can flow even at no applied bias. It is proposed that T1 can be determined by measuring the I–V characteristics in such a geometry. In a magnetic p–n junction, for which the results can be calculated analytically, it is also possible to extract the g-factor and the degree of injected-carrier spin polarization.