Enhancement of light extraction from freestanding GaN nanocolumn slab with bottom subwavelength nanostructures
Enhancement of light extraction from freestanding GaN nanocolumn slab with bottom subwavelength nanostructures
复制标题
DOI：
10.1007/s00340-010-4131-6
复制
发表时间：
2010-07
期刊：
影响因子：
--
通讯作者：
Yongjin Wang;F. Hu;Y. Kanamori;Tong Wu;K. Hane
中科院分区：
文献类型：
--
作者：
Yongjin Wang;F. Hu;Y. Kanamori;Tong Wu;K. Hane
研究一种具有底部亚波长纳米结构的独立GaN纳米柱平板是非常有意义的。低折射率缓冲层提供了更多在空气中发光的路径，纳米结构打破了底部表面的全内反射条件，提高了光提取效率。GaN纳米柱和亚波长纳米结构还可以有效地抑制宽波长范围内的光学反射。本工作将自组装技术、绝缘体上硅技术、硅制造技术和GaN外延生长技术相结合，实现了直径为1200Tμm的具有底部亚波长纳米结构的GaN纳米柱自支撑平板。实验结果表明，GaN纳米柱和亚波长纳米结构的引入大大降低了光学反射率，而光致发光测量表明，在低折射率缓冲层和底层亚波长纳米结构的帮助下，提取的光显著增强。
It is of great interest to investigate a freestanding GaN nanocolumn slab with bottom subwavelength nanostructures. A low-index buffer layer offers more paths accessible to emit light in air, and the nanostructures break the total internal reflection condition at the bottom surface to improve the light-extraction efficiency. The GaN nanocolumns and subwavelength nanostructures can also effectively suppress optical reflection over a broad wavelength range. In this work, the freestanding GaN nanocolumn slabs with bottom subwavelength nanostructures are implemented with a diameter of 1200 μm by a combination of self-assembly technique, silicon-on-insulator (SOI) technology, manufacturing of silicon, and epitaxial growth of GaN. Reflectance results experimentally show that optical reflection is greatly reduced by introducing the GaN nanocolumns and subwavelength nanostructures, and photoluminescence measurements demonstrate that the extracted light is significantly enhanced with the assistance of the low-index buffer layer and bottom subwavelength nanostructures.