High-quality-factor flexible and transparent capacitors with Cr–Au nanomeshes as bottom electrodes
High-quality-factor flexible and transparent capacitors with Cr–Au nanomeshes as bottom electrodes
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DOI：
10.1088/1361-6528/ab13c4
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发表时间：
2019-04
期刊：
影响因子：
3.5
通讯作者：
T. Guo;Guozhen Zhang;Heng Zhang;Xi Su;Xue Chen;Jiaxian Wan;Hao Wu;Chang Liu
中科院分区：
文献类型：
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作者：
T. Guo;Guozhen Zhang;Heng Zhang;Xi Su;Xue Chen;Jiaxian Wan;Hao Wu;Chang Liu
在聚萘二甲酸乙二醇酯（PEN）衬底上制备了柔性和透明电容器。依次制备了Cr-Au纳米网、ZrO2和掺铝氧化锌（AZO）薄膜作为底电极、介电层和顶电极。获得了82的高品质因子，几乎是以往报道的4.9倍，这直接表明功耗大大降低。该柔性电容器可在弯曲半径为7mm的情况下正常工作而不损失电气性能，甚至在周期性弯曲试验后仍能保持电气特性。在1v电压下，电容密度达到12.3 fF μm−2，漏电流为1.5 × 10−8 a cm−2。透光率测量表明，电容器在可见光区域的平均透光率超过50%。因此，这是朝着柔性和透明集成电路的实际应用迈出的重要一步。
Flexible and transparent capacitors have been fabricated on polyethylene naphthalate (PEN) substrates. The Cr–Au nanomeshes, ZrO2, and aluminum-doped zinc oxide (AZO) films were prepared in sequence as bottom electrodes, dielectric layers and top electrodes. A high quality factor of 82 was obtained, nearly 4.9 times larger than that ever reported, which directly indicates much lower power consumption. The flexible capacitors can normally work at a bending radius of 7 mm without any loss of electrical performance, and even maintain electrical characteristics after cyclical bending tests. Moreover, a high capacitance density of 12.3 fF μm−2 and an ultralow leakage current of 1.5 × 10−8 A cm−2 at 1 V have been achieved. Transmittance measurements indicate that the capacitors represent an average optical transmittance of over 50% at a visible region. This is, therefore, a dramatic step toward real applications in flexible and transparent integrated circuits.