A PIC-MC simulation of the effect of frequency on the characteristics of VHF SiH4/H2 discharges
A PIC-MC simulation of the effect of frequency on the characteristics of VHF SiH4/H2 discharges
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DOI：
10.1088/0963-0252/8/3/302
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发表时间：
1999-08
影响因子：
3.8
通讯作者：
M. Yan;W. Goedheer
中科院分区：
文献类型：
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作者：
M. Yan;W. Goedheer
开发了二维粒子池和蒙特卡罗代码，用于研究SiH4/H2混合物在压力低于300 mTorr和频率从13.56到65 MHz时的VHF放电行为。我们研究的目的是解释在各种实验中观察到的随施加频率增加的非晶薄膜沉积速率。在一定的功率密度下，研究了放电区电子能量分布的频率依赖性、离子通量到衬底的能量分布以及功率耗散。实验观察到的沉积速率的增加是由于在有效影响沉积过程的能量范围内有更多的离子。
A 2D particle-in-cell and Monte Carlo code has been developed to study the behaviour of VHF discharges in a mixture of SiH4/H2 at pressures below 300 mTorr and frequencies from 13.56 to 65 MHz. The aim of our study is to explain the increase of the deposition rate of thin amorphous films with the applied frequency which has been observed in various experiments. The frequency dependence of the electron energy distribution in the discharge area, the energy distribution of the ion fluxes to the substrate and the power dissipation are investigated at a constant power density. The experimentally observed increase of the deposition rate is explained by the fact that more ions are in an energy range which effectively influences the deposition process.