AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature
AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature
复制标题
DOI：
10.1038/s41598-019-42822-6
复制
发表时间：
2019-04
影响因子：
4.6
通讯作者：
Kyohei Nakamura;A. Kobayashi;K. Ueno;J. Ohta;H. Fujioka
中科院分区：
文献类型：
--
作者：
Kyohei Nakamura;A. Kobayashi;K. Ueno;J. Ohta;H. Fujioka
在这项研究中，InAlN 在室温 (RT) 下使用脉冲溅射沉积 (PSD) 在玻璃基板上生长，并应用于薄膜晶体管 (TFT)。通过将生长温度从 350°C 降低至室温，InAIN 薄膜的表面平整度得到改善。此外，观察到在室温下生长的InAlN薄膜的电子迁移率和浓度强烈依赖于In成分。还观察到，在将Al原子引入InN的过程中，电子浓度会降低，这很可能归因于费米能级稳定能相对于导带边缘的位置的降低。此外，制作了InAlN-TFT，并确认了场效应迁移率为8 cm2V−1s−1的成功操作。这是基于在室温下在非晶衬底上生长 InAlN 的 TFT 操作的首次演示。
In this study, InAlN was grown on glass substrates using pulsed sputtering deposition (PSD) at room temperature (RT) and was applied to thin-film transistors (TFTs). The surface flatness of the InAIN films was improved by reducing the growth temperature from 350 °C to RT. Further, the electron mobility and concentration of the InAlN film that was grown at RT were observed to be strongly dependent on the In composition. It was also observed that the electron concentration could be reduced during the introduction of Al atoms into InN, which could most likely be attributed to the reduction in the position of the Fermi level stabilization energy with respect to the conduction band edge. Further, InAlN-TFT was fabricated, and successful operation with a field-effect mobility of 8 cm2V−1s−1was confirmed. This was the first demonstration of the operation of TFTs based on the growth of InAlN on an amorphous substrate at RT.