A monolithic active pixel sensor for particle detection in 0.25 μm CMOS technology
A monolithic active pixel sensor for particle detection in 0.25 μm CMOS technology
复制标题
采用 0.25 μm CMOS 技术的单片有源像素传感器，用于粒子检测
DOI：
10.1016/j.nima.2005.11.232
复制
发表时间：
2006
影响因子：
1.4
通讯作者：
G. Villani
中科院分区：
文献类型：
--
作者：
J. Velthuis;P. Allport;G. Casse;A. Evans;R. Turchetta;G. Villani
我们正在开发用于高能物理应用的CMOS单片有源像素传感器（MAPS）。我们已经成功地制作了3个测试结构。它们具有几种不同的像素类型，包括：标准3MOS，允许相关双采样（CDS）的4MOS，电荷放大器像素和灵活的APS（FAPS）。FAPS在每个像素上有一个10深的管道。这是专门设计的光束结构的TESLA建议的直线对撞机铭记。我们的第一个设备和源测试结果上的两个最近的测试结构的激光测试的结果将被提交。
We are developing CMOS monolithic active pixel sensors (MAPS) for High Energy Physics applications. We have successfully produced 3 test structures. They feature several different pixel types including: standard 3MOS, 4MOS allowing Correlated Double Sampling (CDS), charge amplifier pixels and a flexible APS (FAPS). The FAPS has a 10 deep pipeline on each pixel. This is specifically designed with the beam structure of the TESLA proposal for the Linear Collider in mind. Results of a laser test on our first device and source test results on two more recent test structures will be presented.