Magnetism of Fe thin layers on GaAs (001)
Magnetism of Fe thin layers on GaAs (001)
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GaAs (001) 上 Fe 薄层的磁性
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
A. Schuhl
中科院分区：
文献类型：
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作者：
A. Filipe;A. Schuhl
研究了GaAs（001）衬底上外延生长的Fe薄膜在不同衬底温度下的磁性。磁化缺陷已被检测和研究。它与厚度和温度的依赖关系清楚地表明，在界面处存在一个几乎半磁化的相，覆盖着“作为散装”铁。为了抑制这种相互扩散，我们研究了几种方法。使用之前的GaAs的O3氧化，Fe层即使在200 °C下沉积也被完全磁化。
We study the magnetic properties of Fe thin films epitaxially grown on GaAs (001) for a large range of substrate temperature. Magnetization deficiency has been detected and studied. Its dependence with both thickness and temperature clearly show the existence of a nearly half-magnetized phase at the interface, covered by “as-bulk” Fe. In order to inhibit this interdiffusion, we study several methods. Using previous O3 oxidation of GaAs, the Fe layer is fully magnetized even for deposition at 200 °C.