Passivation of SiO2/Si Interfaces Using High-Pressure-H2O-Vapor Heating
Passivation of SiO2/Si Interfaces Using High-Pressure-H2O-Vapor Heating
复制标题
使用高压 H2O 蒸汽加热钝化 SiO2/Si 界面
DOI：
10.1143/jjap.39.2492
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发表时间：
2000
影响因子：
1.5
通讯作者：
T. Sameshima
中科院分区：
文献类型：
--
作者：
K. Sakamoto;T. Sameshima
在本文中，我们讨论了使用高压水蒸汽加热对硅表面进行钝化。我们报告了通过高压 H2 Ov apor 热处理在硅表面形成的 SiOx 薄膜的整体性能发生了巨大变化。还显示了块体和 SiO2/Si 界面中缺陷态密度的降低。简单的工艺步骤可以实现载流子的长寿命和低复合速度。我们证明当前的低复合速度钝化是稳定的。此外，我们还讨论了使用覆盖 SiO2/Si 界面的顶部 SiOx 双层绝缘层进行有效的场效应钝化。 2. 实验
In this paper, we discuss the passivation of the silicon surface using high-pressure H2O vapor heating. We report a drastic change in bulk properties of SiOx films formed on the silicon surface by heat treatment with high-pressure H2 Ov apor. The reduction of the densities of defect states in bulk and SiO2/Si interfaces is also shown. The simple process steps can realize a long lifetime and a low recombination velocity of carriers. We demonstrate that the present passivation with a low recombination velocity is stable. Moreover, we also discuss effective field effect passivation using double insulating layers of top SiOx overlaying SiO2/Si interfaces. 2. Experimental