Deposition of PZT thin films with {001}, {110}, and {111} crystallographic orientations and their transverse piezoelectric characteristics
Deposition of PZT thin films with {001}, {110}, and {111} crystallographic orientations and their transverse piezoelectric characteristics
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{001}、{110}和{111}晶向PZT薄膜的沉积及其横向压电特性
DOI：
10.5185/amlett.2011.7281
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
I. Kanno
中科院分区：
文献类型：
--
作者：
D. Ambika;Viswanathan Kumar;Kohei Tomioka;I. Kanno
采用金属有机物分解旋涂技术在（111）Pt/Ti/SiO2/Si衬底上制备了具有{001}、{110}和{111}取向的准同型相界（MPB）组成的Pb（ZrxTi 1-x）O3（PZT）薄膜。确定了晶体取向对薄膜横向压电系数e_（31 *）的影响。在{110}取向膜中发现最大的e31 *。在e31 * 中观察到的差异已被解释的基础上的畴壁的贡献，这是依赖于薄膜纹理。还研究了薄膜织构对偏振开关特性的影响。版权所有© 2012 VBRI Press.
Pb(ZrxTi1-x)O3 (PZT) thin films of morphotropic phase boundary (MPB) composition having {001}, {110}, and {111}- orientations were fabricated on silicon substrates (111)Pt/Ti/SiO2/Si using a metal organic decomposition spin-coating technique. The influence of crystallographic orientation on the transverse piezoelectric coefficient e31 * of the films have been determined. The largest e31 * was found in {110}-oriented film. The differences observed in e31 * have been explained on the basis of domain wall contributions which are dependent on film texture. The influence of thin film texture on polarization switching characteristics have also been studied. Copyright © 2012 VBRI Press.