Transmission Electron Microscopy in Micro-nanoelectronics
Transmission Electron Microscopy in Micro-nanoelectronics
复制标题
微纳电子学中的透射电子显微镜
DOI：
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发表时间：
2012
期刊：
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通讯作者：
A. Claverie
中科院分区：
文献类型：
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作者：
A. Claverie
今天，明亮和高度相干的电子源和灵敏的探测器的可用性已经从根本上改变了透射电子显微镜（TEM）可以获得的信息的类型和质量。TEM现在不仅在学术界，而且在工业研究中心和晶圆厂中大量存在。本书以简单实用的方式介绍了基于TEM的新定量技术，这些技术最近被发明或开发，以解决科学家和工艺工程师在开发或优化半导体层和器件时必须面对的大多数主要挑战性问题。这些技术中有几种是基于电子全息术;其他技术则利用了在纳米探针内聚焦强光束的可能性。应变测量和映射，掺杂剂激活和隔离，在纳米级的界面反应，缺陷识别和FIB试样制备是在这本书中提出的主题。在简要介绍了基本理论之后，每种技术都通过实验室或工厂的例子进行了说明。
Today, the availability of bright and highly coherent electron sources and sensitive detectors has radically changed the type and quality of the information which can be obtained by transmission electron microscopy (TEM). TEMs are now present in large numbers not only in academia, but also in industrial research centers and fabs. This book presents in a simple and practical way the new quantitative techniques based on TEM which have recently been invented or developed to address most of the main challenging issues scientists and process engineers have to face to develop or optimize semiconductor layers and devices. Several of these techniques are based on electron holography; others take advantage of the possibility of focusing intense beams within nanoprobes. Strain measurements and mappings, dopant activation and segregation, interfacial reactions at the nanoscale, defect identification and specimen preparation by FIB are among the topics presented in this book. After a brief presentation of the underlying theory, each technique is illustrated through examples from the lab or fab.