A method for extracting mechanical Q factor of the piezoelectric film without etching substrate
A method for extracting mechanical Q factor of the piezoelectric film without etching substrate
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一种无需刻蚀衬底的压电薄膜机械Q因数提取方法
DOI：
10.1109/ultsym.2019.8926088
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
S. Kinoshita and T. Yanagitani
中科院分区：
文献类型：
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作者：
王超一;高橋直生;長坂恭輔;鈴木悠司;姜海松;浜本貴一;上野芳康;S. Kinoshita and T. Yanagitani
在其他电损耗可忽略不计的情况下，FBAR滤波器的锐度由压电薄膜的机械Q因子（Qm）决定。在这项研究中，我们介绍了一种新的方法，利用压电薄膜/衬底结构（HBAR结构）来估计Qmof薄膜，而不使用自立薄膜结构。当薄膜（Qpiezo）的Qmof低于衬底（Qsub）的Qmof时，整个HBAR （QHBAR）的Q因子仅在谐振频率附近由于薄膜的倾倒而减小，薄膜具有较大的机械损耗。因此，当Qsubis已知时，可以通过QHBAR的减少量来估计qpiezo2。我们考察了不同样品中Qmfactor的差异是否能够被检测出来。实验结果表明，在各膜的谐振频率附近，实验qhbarn明显减小。ScAlN的还原量大于纯AlN，表明ScAlN的力学qpiezoa低于纯AlN。
The sharpness of FBAR filters are determined by mechanical Q factors (Qm) of piezoelectric thin films when other electrical loss is negligibly small. In this study, we introduce a new method for estimating Qmof films using piezoelectric film/substrate structures (HBAR structures) without using self-standing film structures. When Qmof the film (Qpiezo) is lower than that of the substrate (Qsub), Q factor of the entire HBAR (QHBAR) decrease due to the dumping of the film which have larger mechanical loss, only in the vicinity of the resonant frequency. Therefore, Qpiezocan be estimated from the amount of reduction in the QHBAR when Qsubis known. We investigated whether the differences of the Qmfactor among various samples are able to be detected. Obvious decrease of experimental QHBARin the vicinity of the resonant frequency of each film was observed as expected. The amount of reduction of ScAlN is larger than that of pure AlN, indicating that mechanical Qpiezoof ScAlN is lower than that of pure AlN as expected.