Crystallization and annealing effects of sputtered tin alloy films on electromagnetic interference shielding
Crystallization and annealing effects of sputtered tin alloy films on electromagnetic interference shielding
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DOI：
10.1016/j.apsusc.2010.11.126
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发表时间：
2011-02-01
影响因子：
6.7
通讯作者：
Chiang, Che-Ming
中科院分区：
文献类型：
--
作者：
Hung, Fei-Shuo;Hung, Fei-Yi;Chiang, Che-Ming
Sn、Al和Cu不仅具有电磁干扰（EMI）屏蔽效率，而且具有可接受的成本。本研究以溅镀锡铝薄膜及锡铜薄膜为研究对象，探讨晶化机制及薄膜厚度对电磁干扰特性的影响。结果表明，退火后的Sn-xAl薄膜增强了电磁干扰（EMI）屏蔽性能。溅射态Sn-xCu薄膜中Cu原子浓度越高，其低频电磁屏蔽性能越差。退火后，Cu含量较低的Sn-Cu薄膜在较低频率下具有良好的电磁屏蔽性能，但在较高频率下具有相反的趋势。对于晶化处理后的Sn-xAl和Sn-xCu薄膜，溅射膜具有更高的导电性，但EMI屏蔽没有显著增强。(C)2010 Elsevier B. V.保留所有权利。
Sn, Al and Cu not only possess electromagnetic interference (EMI) shield efficiency, but also have acceptable costs. In this study, sputtered Sn-Al thin films and Sn-Cu thin films were used to investigate the effect of the crystallization mechanism and film thickness on the electromagnetic interference (EMI) characteristics. The results show that Sn-xAl film increased the electromagnetic interference (EMI) shielding after annealing. For as-sputtered Sn-xCu films with higher Cu atomic concentration, the low frequency EMI shielding could not be improved. After annealing, the Sn-Cu thin film with lower Cu content possessed excellent EMI shielding at lower frequencies, but had an inverse tendency at higher frequencies. For both the Sn-xAl and Sn-xCu thin films after crystallization treatment, the sputtered films had higher electrical conductivity, however the EMI shielding was not enhanced significantly. (C) 2010 Elsevier B.V. All rights reserved.