Physics and chemistry of silicon wafer bonding investigated by infrared absorption spectroscopy
Physics and chemistry of silicon wafer bonding investigated by infrared absorption spectroscopy
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DOI：
10.1116/1.589070
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发表时间：
1996-07
影响因子：
1.4
通讯作者：
M. K. Weldon;Y. Chabal;D. Hamann;S. Christman;E. Chaban;L. Feldman
中科院分区：
文献类型：
--
作者：
M. K. Weldon;Y. Chabal;D. Hamann;S. Christman;E. Chaban;L. Feldman
硅片键合是通过连接两个无颗粒硅片并在高温(∼1100°C)下进行热处理来实现的。我们已经使用了多次内透红外吸收光谱来探测晶片在初始连接时以及在随后的退火步骤中的界面。对于原子扁平的疏水晶片(氢钝化)，我们观察到由于表面亲密接触时发生的物理相互作用(范德华引力)，硅-氢伸缩频率发生了显著的移动。氢最终在高温(1000°C)下消失，并在两个表面之间形成硅-硅键。对于亲水性晶片(氧化物钝化)，我们最初在界面上观察到三到五个单分子水层(通过氢键提供初始吸引力)，以及在低温下终止氧化物的羟基的存在。在中等温度(<；400℃)时，界面处的水解离并导致...
Silicon wafer bonding is achieved by joining two particle‐free silicon wafers and annealing to elevated temperatures (∼1100 °C). We have used multiple internal transmission infrared absorption spectroscopy to probe the interface between the wafers upon initial joining and also during subsequent annealing steps. For atomically flat hydrophobic wafers (H passivated), we observe a pronounced shift in the Si–H stretching frequency due to the physical interaction (van der Waals attraction) that occurs when the surfaces come into intimate contact. The hydrogen eventually disappears at high temperatures (1000 °C) and Si–Si bonds are formed between the two surfaces. For hydrophilic wafers (oxide passivated), we initially observe three to five monolayers of water at the interface (providing the initial attraction through H bonding), as well as the presence of hydroxyl groups that terminate the oxide at low temperature. Upon moderate heating (<400 °C), the water trapped at the interface dissociates and leads to the...