Structures and electronic properties of symmetric and nonsymmetric graphene grain boundaries
Structures and electronic properties of symmetric and nonsymmetric graphene grain boundaries
复制标题
对称和非对称石墨烯晶界的结构和电子性质
DOI:
10.1016/j.carbon.2012.12.021
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发表时间:
2013-04
期刊:
影响因子:
10.9
通讯作者:
Zhao, Jijun
中科院分区:
文献类型:
--
作者:
Zhang, Junfeng;Zhao, Jijun
The graphene grain boundaries with periodic length up to 18Å have been studied using density functional theory. Atomic structures, thermodynamic stabilities and electronic properties of 40 grain boundaries with symmetric and nonsymmetric structures were investigated. According to the arrangements of pentagons and heptagons on the boundary, grain boundaries were cataloged into four classes. Some nonsymmetric grain boundaries constructed here have identical misorientation angles to the experimentally observed ones. The formation energies of grain boundaries can be correlated with the misorientation angle and inflection angle. Nonsymmetric grain boundaries possess comparable formation energies to their symmetric counterparts when the periodic length along the defect line is larger than 1nm. Analysis of electronic density of states shows that the existence of a grain boundary usually increases the density of states near the Fermi level, whereas some symmetric grain boundaries can open a small band gap due to local sp2-to-sp3rehybridization.
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