Characteristics of germanium dry etching using inductively coupled SF6 plasma
Characteristics of germanium dry etching using inductively coupled SF6 plasma
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DOI：
10.1016/j.mssp.2011.12.002
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发表时间：
2012-08
影响因子：
4.1
通讯作者：
K. Shim;Y. Kil;Hyeon Deok Yang;B. K. Park;J.H. Yang;Sukill Kang;T. Jeong;T. Kim
中科院分区：
文献类型：
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作者：
K. Shim;Y. Kil;Hyeon Deok Yang;B. K. Park;J.H. Yang;Sukill Kang;T. Jeong;T. Kim
研究了不同功率、SF6气体流量和工作气压下的电感耦合等离子体刻蚀锗（Ge）工艺。当SF6流量从10 sccm增加到60 sccm时，Ge的刻蚀速率从1007 nm/min增加到2447 nm/min。当ICP功率从100增加到400 W时，Ge的刻蚀速率从265 nm/min增加到1007 nm/min，而当工作气压从5 mTorr增加到20 mTorr时，Ge的刻蚀速率从552 nm/min减小到295 nm/min。蚀刻轮廓是各向同性的。随着SF6流量、ICP功率和工作气压的降低，表面粗糙度降低。光学发射光谱被用来检查在等离子体中的气相物种，并已确定从激发原子S和F的发射。由于SF6等离子体的表面的组合物已获得使用X射线光电子能谱。研究发现，SF_6等离子体刻蚀锗的反应层是一层薄的G-S、Ge-F和Ge-O键合物。
Inductively coupled SF6plasma etching of germanium (Ge) was investigated at different inductively coupled plasma (ICP) power levels, the SF6flow rate, and the working pressure. The etch rate of Ge increases from 1007 to 2447nm/min as the SF6flow rate increases from 10 to 60sccm. Also, the etch rate of Ge increases from 265 to 1007nm/min as the ICP power level increases from 100 to 400W whereas the etch rate of Ge decreases from 552 to 295nm/min as the working pressure increases from 5 to 20mTorr. The etch profile is isotropic. As SF6flow, ICP power and working pressure decrease the surface roughness decreases. Optical emission spectroscopy was used to examine the gas phase species in the plasma, and emission from excited atomic S and F has been identified. Composition of the surface due to SF6plasmas has been obtained using X-ray photoelectron spectroscopy. Reaction layers on germanium due to inductively coupled SF6plasma etching are found to be a thin, layer with of G–-S, Ge–F and Ge–O bonded species.