Resonant tunneling in superconductor-semiconductor-superconductor junctions
Resonant tunneling in superconductor-semiconductor-superconductor junctions
复制标题
超导-半导体-超导结中的共振隧道效应
DOI：
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发表时间：
1982
期刊：
影响因子：
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通讯作者：
M. Fistul
中科院分区：
文献类型：
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作者：
L. Aslamazov;M. Fistul
结果表明，在非简并半导体的情况下，超导体-半导体-超导体结的临界电流可以随着半导体层的厚度比普通隧穿的情况下更慢地减小。这种效应归因于相干电子沿着由周期性排列的杂质原子组成的轨道共振通过，这些杂质原子在半导体中以低概率产生。确定了相应的临界电流的温度依赖性和该效应存在的区域。
It is shown that in the case of a nondegenerate semiconductor the critical current for superconductor-semiconductor-superconductor junctions can decrease with the thickness of the semiconductor layer more slowly than in the case of ordinary tunneling. The effect is attributed to resonant passage of coherent electrons along trajectories made up of periodically arranged impurity atoms that are produced in the semiconductor with low probability. The corresponding temperature dependence of the critical current and the region in which the effect exists are determined.