THE IDENTIFICATION AND CHARACTERIZATION OF MIXED OXIDATION-STATES AT OXIDIZED TITANIUM SURFACES BY ANALYSIS OF X-RAY PHOTOELECTRON-SPECTRA
THE IDENTIFICATION AND CHARACTERIZATION OF MIXED OXIDATION-STATES AT OXIDIZED TITANIUM SURFACES BY ANALYSIS OF X-RAY PHOTOELECTRON-SPECTRA
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DOI：
10.1039/f19878300351
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发表时间：
1987-01-01
期刊：
影响因子：
--
通讯作者：
ROBERTS, MW
中科院分区：
文献类型：
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作者：
CARLEY, AF;CHALKER, PR;ROBERTS, MW
用X射线光电子能谱研究了氧与钛的相互作用。分析复合光电子能谱的方法（曲线拟合，解卷积和光谱减法）进行了讨论和审查的关键和“差谱”的方法突出的优点。可变的氧化态（低氧化物）的证据是从分析的Ti（2 p）光谱观察到的薄氧化膜（约。10分）。角度依赖的研究建立了较低的氧化态Ti 2+和Ti 3+优先形成在金属氧化物界面，而Ti4+物种占主导地位的氧化物-气体界面。在薄氧化物覆盖层内的氧化态的分布可以通过来自金属衬底的Ti 0物质的热诱导扩散来改变;后者可以在低温（约100 ℃）下发生。200 K）的薄氧化膜制度的调查。
The interaction of oxygen with titanium has been studied by X-ray photoelectron spectroscopy. Methods for analysing composite photoelectron spectra (curve fitting, deconvolution and spectral subtraction) are discussed and examined critically and the advantages of the ‘difference spectra’ approach highlighted. Evidence for variable oxidation states (suboxides) is obtained from an analysis of the Ti(2p) spectra observed during the formation of thin oxide films (ca. 10 Å). Angular-dependent studies established that the lower oxidation states Ti2+ and Ti3+ were formed preferentially at the metal–oxide interface, whereas Ti4+ species were dominant at the oxide–gas interface. The distribution of the oxidation states within the thin oxide overlayer may be altered by thermally induced diffusion of Ti0 species from the metal substrate; the latter can occur at low temperature (ca. 200 K) for the thin oxide film regime investigated.