Influence of interface layer insertion on the spin Seebeck effect and the spin Hall magnetoresistance of Y3Fe5O12/Pt bilayer systems
Influence of interface layer insertion on the spin Seebeck effect and the spin Hall magnetoresistance of Y3Fe5O12/Pt bilayer systems
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DOI：
10.1103/physrevb.102.094411
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发表时间：
2020-09-08
影响因子：
3.7
通讯作者：
Yuasa, Hiromi
中科院分区：
文献类型：
--
作者：
Niimura, Takumi;Kurokawa, Yuichiro;Yuasa, Hiromi
我们观察到显着增强的自旋塞贝克效应（SSE）和自旋霍尔磁阻（SMR）值插入0.3-0.6 nm厚的磁性材料层具有不同的组成（Cr，Ni 80 Fe 20，Co 90 Fe 10，Fe 50 Co 50，和Fe）在Y3 Fe 5 O 12/Pt界面。为了研究这些插入层的实际磁性状态，我们通过广义磁光椭圆偏振术研究了这些层的磁化强度。在此厚度范围内的磁性插入层没有表现出可测量的磁化强度，即使我们的方法应该已经检测到所使用的材料的体积磁化强度值的一小部分容易。因此，观察到的SSE和SMR增强薄磁性材料层的插入所产生的没有从净界面磁化，但可能，相反，有关的顺磁状态的插入层。
We observe significantly enhanced spin Seebeck effect (SSE) and spin Hall magnetoresistance (SMR) values by inserting 0.3-0.6-nm-thick layers of magnetic materials with different composition (Cr, Ni80Fe20, Co90Fe10, Fe50Co50, and Fe) at the Y3Fe5O12/Pt interface. To study the actual magnetic state of these insertion layers, we, then, investigated the magnetization of these layers via generalized magneto-optical ellipsometry. Magnetic insertion layers in this thickness range did not exhibit a measurable magnetization, even though our method should have detected even a small fraction of the bulk magnetization value for the utilized materials easily. Therefore, the observed SSE and SMR enhancement generated by the insertion of thin magnetic material layers did not result from a net interface magnetization but might, instead, be related to the paramagnetic state of the inserted layers.