Well-posedness for the drift-diffusion system in Lp arising from the semiconductor device simulation
Well-posedness for the drift-diffusion system in Lp arising from the semiconductor device simulation
复制标题
DOI：
10.1016/j.jmaa.2007.11.017
复制
发表时间：
2008-06
影响因子：
1.3
通讯作者：
Masaki Kurokiba;T. Ogawa
中科院分区：
文献类型：
--
作者：
Masaki Kurokiba;T. Ogawa
我们讨论半导体器件设计仿真中产生的非线性抛物线系统的强解。这里考虑的这个方程控制着大规模集成电路 (V-LSI) 的 MOS FET 上的电子和空穴动力学。我们证明了Lp空间中强解的存在性、唯一性和稳定性，并讨论了其全局存在性。
We discuss strong solutions of a nonlinear parabolic system that arise from the simulation for the semiconductor device design. This equation considered here is governing the electron and positive hole dynamics on the MOS FET for the Large Scaled Integral-Circuit (V-LSI). We show that the existence and uniqueness and stability of the strong solution in Lpspaces and will discuss on the global existence.