Silicon antisite in 4H SiC.
Silicon antisite in 4H SiC.
复制标题
4H SiC 中的硅反位。
DOI：
10.1103/physrevlett.87.045502
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发表时间：
2001
影响因子：
8.6
通讯作者：
E. Janzén
中科院分区：
文献类型：
--
作者：
N. T. Son;P. Hai;E. Janzén
在电子辐照的p型4 H SiC中观察到了具有C（3V）对称性和自旋S = 1/2的电子顺磁共振谱。根据观察到的29 Si超精细结构，我们认为缺陷是孤立的硅反位（Si（C））。自旋S = 1/2和仅在p型材料中观察到的缺陷表明Si（C）处于正电荷状态。Si（C）（+）中心的g值和超精细耦合常数随温度的变化表明，在缺陷附近有相当大的晶格弛豫.
Electron paramagnetic resonance spectrum with C(3V) symmetry and a spin S = 1/2 has been observed in p-type, electron-irradiated 4H SiC. Based on the observed 29Si hyperfine structures it is suggested that the defect is the isolated silicon antisite (Si(C)). The spin S = 1/2 and the observation of the defect only in p-type material suggest that the Si(C) is in the positive-charge state. A strong temperature dependence of the g value and hyperfine coupling constant of the Si(C)(+) center indicates a considerable lattice relaxation in the vicinity of the defect.