WIGNER CRYSTALLIZATION AND METAL-INSULATOR TRANSITION OF TWO-DIMENSIONAL HOLES IN GAAS AT B = 0
WIGNER CRYSTALLIZATION AND METAL-INSULATOR TRANSITION OF TWO-DIMENSIONAL HOLES IN GAAS AT B = 0
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B = 0 时 GAAS 中二维孔的维格纳结晶和金属绝缘体转变
DOI：
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发表时间：
1998
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通讯作者：
M. Shayegan
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作者：
Jongsoo Yoon;C. C. Li;D. Shahar;D. Tsui;M. Shayegan
我们报告了 GaAs/AlGaAs 异质结构中低无序二维空穴系统 (2DHS) 的输运特性，该系统在温度范围内具有前所未有的高峰值迁移率 $7 imes 10^5cm^2/Vs$，空穴密度为 $4.8 imes 10^9 cm^{-2}<p<3.72 imes 10^{10}cm^{-2}$ $50mK<T<1.3K$。根据它们的 T、p 和电场依赖性，我们发现在这种异常干净的 2DHS 中，零磁场中的金属-绝缘体转变发生在 $r_s=35.1pm0.9$，这与 Tanatar 和 Ceperley 对理想干净的 2D 系统预测的维格纳结晶 ${r_s}^c=37pm 5$ 的临界 $r_s$ 非常一致。
We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of $7 imes 10^5cm^2/Vs$, with hole density of $4.8 imes 10^9 cm^{-2}<p<3.72 imes 10^{10}cm^{-2}$ in the temperature range of $50mK<T<1.3K$. From their T, p, and electric field dependences, we find that the metal-insulator transition in zero magnetic field in this exceptionally clean 2DHS occurs at $r_s=35.1pm0.9$, which is in good agreement with the critical $r_s$ for Wigner crystallization ${r_s}^c=37pm 5$, predicted by Tanatar and Ceperley for an ideally clean 2D system.