HVPE Growth of GaN on a GaN Templated (111) Si Substrate
HVPE Growth of GaN on a GaN Templated (111) Si Substrate
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GaN 模板化 (111) Si 衬底上的 GaN 的 HVPE 生长
DOI：
10.1002/pssc.200390001
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
N. Sawaki
中科院分区：
文献类型：
--
作者：
Y. Honda;T. Ishikawa;Y. Nishimura;M. Yamaguchi;N. Sawaki
尝试在(111)Si衬底上用氢化物气相外延(HVPE)方法生长GaN。为了抑制硅在高温下的化学反应，采用选择性金属有机气相外延(MOVPE)方法在衬底表面覆盖了一层薄的SiO_2薄膜或GaN金字塔。GaN金字塔为后续的GaN高压外延生长提供了种子。成功地获得了厚度为12μm的均匀纤锌矿GaN薄膜。(0004)X射线摇摆曲线的半高宽为450弧秒。在4.2K下的阴极发光(CL)谱有一个很强的带边发射峰，其半高宽可达30.3 meV。
The hydride vapor phase epitaxial (HVPE) growth of GaN was attempted on a (111) Si substrate. In order to suppress the chemical reaction of the Si at high temperatures, the surface of the substrate was covered by a thin SiO2 film or GaN pyramids which were grown by selective metalorganic vapor phase epitaxy (MOVPE). The GaN pyramids served as the seeds for the following HVPE growth of GaN. Uniform layer of 12 μm thick wurtzite GaN was achieved successfully. The full width at half maximum (FWHM) of (0004) X-ray rocking curve was 450 arcsec. The cathode luminescence (CL) spectra at 4.2 K exhibited a strong band edge emission peak of which FWHM was as broad as 30.3 meV.