Electronic structures of Ag(Cu)–As–Se glasses
Electronic structures of Ag(Cu)–As–Se glasses
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Ag(Cu)–As–Se 玻璃的电子结构
DOI：
10.1016/s0022-3093(96)00605-9
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发表时间：
1997
影响因子：
3.5
通讯作者：
M. Itoh
中科院分区：
文献类型：
--
作者：
M. Itoh
本文研究了Ag（Cu）-As_2Se_3系玻璃沿着Ag（Cu）-As_2Se_3系的基本物理性质，以获得电子结构的知识。在光学上，Ag和Cu的加入使As_2Se_3体系的吸收边发生红移，其中Ag-As-Se体系的红移小于Cu-As-Se体系。在X射线光电子能谱中，随着Ag（Cu）含量的增加，Ag 4d态和Cu 3d态逐渐出现在上价带。此外，瞬态光电流研究表明，在Ag（Cu）-As-Se玻璃中，距离价带E <0.5 eV处的局域态Nt（E）呈指数分布，Nt（E）<$exp（−E/kT 0），其中Ag-As-Se系统具有更高的特征温度T0。在此基础上，从统一的观点考虑了Ag（Cu）-As-Se玻璃的电子结构。
Fundamental physical properties of Ag(Cu)–As–Se glasses along Ag(Cu)–As2Se3tie lines have been investigated in order to obtain knowledge of electronic structures. Optically, Ag and Cu addition to As2Se3induce red shifts of the absorption edges, in which the shift in the Ag–As–Se system is smaller than that in the Cu–As–Se system. In X-ray photoelectron spectra, Ag 4d and Cu 3d states gradually appear at an upper valence band with increasing Ag(Cu) content. Further, a transient photocurrent study shows that the localized states Nt(E) at E≃0.5 eV from the valence band are distributed exponentially, Nt(E)∝exp(−E/kT0), in Ag(Cu)–As–Se glasses, in which the Ag–As–Se system possesses a greater characteristic temperature T0. On the bases of these observations, electronic structures of Ag(Cu)–As–Se glasses are considered from a unified point-of-view.