Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers
Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers
复制标题
利用 AlGaN/AlN 中间层的应变工程形成 m 面 InGaN/GaN 量子点
DOI：
10.1063/1.3626589
复制
发表时间：
2011
影响因子：
4
通讯作者：
Y. Arakawa
中科院分区：
文献类型：
--
作者：
Xuelin Yang;M. Arita;S. Kako;Y. Arakawa
我们展示了生长的m面InGaN/GaN量子点的金属有机化学气相沉积。GaN层上InGaN量子点的形成仅在AlGaN/AlN中间层在GaN层之前沉积时实现。结构分析表明，AlGaN/AlN层，引入了GaN层的压缩应变在量子点的形成中起着至关重要的作用。在室温下观察到的强的光致发光发射以及m-平面InGaN量子点中量子限制斯塔克效应的减少打开了使用这种系统作为有效的单光子源的可能性。
We demonstrate the growth of m-plane InGaN/GaN quantum dots by metalorganic chemical vapor deposition. Formation of the InGaN quantum dots on the GaN layer is achieved only when AlGaN/AlN interlayers are deposited prior to the GaN layer. Structural analysis shows that the AlGaN/AlN layers which introduce a compressive strain for the GaN layer play a crucial role in the formation of the quantum dots. The strong photoluminescence emission observed at room temperature as well as the reduction of quantum confinement Stark effect in the m-plane InGaN quantum dots opens the possibility of using such systems as efficient single photon sources.