Modeling of thin film silicon solar cells with improved open circuit voltage
Modeling of thin film silicon solar cells with improved open circuit voltage
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具有改进的开路电压的薄膜硅太阳能电池的建模
DOI：
10.1109/pedg.2013.6785613
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
V. Varadan
中科院分区：
文献类型：
--
作者：
V. Budhraja;V. Varadan
这项工作的目的是开发一个数值程序来模拟薄膜等离子体太阳能电池的性能，详细分析光与太阳能电池的相互作用以及由于光伏效应而产生的电荷传输。采用有限差分法对薄膜硅太阳电池各层的连续性方程和泊松方程进行了数值模拟。在每一层中，对方程组进行数值求解。网格大小被选择为小于德拜长度。由于非晶硅的带隙较大，薄膜硅太阳电池的本征载流子浓度较低。计算了每个网格点的能带、电子和空穴浓度、电场、电压、电流密度等参数。利用全波电磁模拟计算了载流子输运模型的产生率。
The purpose of this work is to develop a numerical code for modeling the performance of thin film plasmonic solar cells performing a detailed analysis of both the light interaction with the solar cell and the resulting charging transport due to the photovoltaic effect. The continuity and Poisson equations were modeled in each layer of thin film silicon solar cells using finite difference method. In each layer the system of equations were solved numerically. The mesh size was chosen to be smaller than the Debye length. Because of the large bandgap of amorphous silicon the intrinsic carrier concentration is lower in thin film silicon solar cells. Different parameters like energy bands, electron and hole concentrations, electric field, voltage, current densities etc. were calculated at each mesh point. The generation rate for carrier transport modeling was calculated from full wave electromagnetic simulations.