Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light-electron microscopy
Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light-electron microscopy
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DOI：
10.1063/5.0080024
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发表时间：
2022-02-21
影响因子：
3.2
通讯作者：
Trager-Cowan, C.
中科院分区：
文献类型：
--
作者：
Naresh-Kumar, G.;Edwards, P. R.;Trager-Cowan, C.
我们展示了一种非破坏性的方法来理解GaN薄膜的生长模式，同时使用相关的扫描电子显微镜技术和拉曼显微镜量化其残余应变及其对光学和电学性能的影响。由电子背散射衍射、阴极发光和共聚焦拉曼技术得出的一致应变图揭示了具有相似大小和方向的应变变化，特别是在位错附近。将共聚焦拉曼成像与电子通道对比成像相关联表明，由于潜在的生长掩膜，位错自行组织形成独特的图案，其中一些位错沿着[0001]生长方向排列，一些位错是倾斜的。这项工作中提出的方法可以用于研究任何异质外延生长，特别是那些在生长基质上使用选择性掩膜的生长，其中形态影响随后的生长。(c) 2022作者。
We demonstrate a non-destructive approach to understanding the growth modes of a GaN thin film and simultaneously quantify its residual strains and their effect on optical and electrical properties using correlative scanning electron microscopy techniques and Raman microscopy. Coincident strain maps derived from electron backscatter diffraction, cathodoluminescence, and confocal Raman techniques reveal strain variations with similar magnitude and directions, especially in the proximity of dislocations. Correlating confocal Raman imaging with electron channeling contrast imaging suggests that the dislocations organize themselves to form a distinctive pattern as a result of the underlying growth mask, where some of them align along the [0001] growth direction and some are inclined. The methodology presented in this work can be adopted to investigate any heteroepitaxial growth, in particular, those using selective masks on the growth substrates, where the morphology influences the subsequent growth. (c) 2022 Author(s).