Formation and photoluminescence of GaAs1−xNx dilute nitride achieved by N-implantation and flash lamp annealing
Formation and photoluminescence of GaAs1−xNx dilute nitride achieved by N-implantation and flash lamp annealing
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DOI：
10.1063/1.4890114
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发表时间：
2014-07
影响因子：
4
通讯作者：
S. Prucnal;W. Skorupa;M. Helm;Shengqiang Zhou
中科院分区：
文献类型：
--
作者：
S. Prucnal;W. Skorupa;M. Helm;Shengqiang Zhou
本文采用氮离子注入和闪光灯退火（FLA）法制备了稀氮半导体GaAs1−xNx。将原子浓度分别为ximp1 = 0.38%和ximp2 = 0.76%的N注入到GaAs晶片中。在FLA处理过程中，GaAs1−xNx层在GaAs上重新生长。对经FLA处理的GaAs1−xNx样品进行了室温近带边光致发光（PL）观察。根据近带边PL峰的红移，当ximp1 = 0.38%和ximp2 = 0.76%时，注入的N原子分别有80%和44%被FLA引入晶格。我们的研究表明，离子注入后进行超短闪光灯处理，可以实现大规模生产，在GaAs基半导体的带隙工程中具有广阔的前景。
In this paper, we present the fabrication of dilute nitride semiconductor GaAs1−xNx by nitrogen-ion-implantation and flash lamp annealing (FLA). N was implanted into the GaAs wafers with atomic concentration of about ximp1 = 0.38% and ximp2 = 0.76%. The GaAs1−xNx layer is regrown on GaAs during FLA treatment in a solid phase epitaxy process. Room temperature near band-edge photoluminescence (PL) has been observed from the FLA treated GaAs1−xNx samples. According to the redshift of the near band-edge PL peak, up to 80% and 44% of the implanted N atoms have been incorporated into the lattice by FLA for ximp1 = 0.38% and ximp2 = 0.76%, respectively. Our investigation shows that ion implantation followed by ultrashort flash lamp treatment, which allows for large scale production, exhibits a promising prospect on bandgap engineering of GaAs based semiconductors.