Epitaxial Growth of Organic Thin Films by Organic Molecular Beam Epitaxy
Epitaxial Growth of Organic Thin Films by Organic Molecular Beam Epitaxy
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有机分子束外延生长有机薄膜
DOI：
10.1143/jjap.28.l306
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发表时间：
1989
影响因子：
1.5
通讯作者：
A. Garito
中科院分区：
文献类型：
--
作者：
M. Hara;H. Sasabe;A. Yamada;A. Garito
通过薄膜生长过程中的反射高能电子衍射(RHEED)首次证实了有机超薄膜的外延生长。采用最新发展的有机分子束外延技术，在MoS_2解理面上，在约4×10~(-9)托的高真空度下异质外延生长了铜酞菁(CuPC)薄膜。RHEED分析表明，外延生长的CuPc具有自己的晶格常数，即使在沉积初期也完全不同于MoS_2。
Epitaxial growth of an organic ultrathin film has been confirmed for the first time by reflection high-energy electron diffraction (RHEED) during film growth. Copper phthalocyanine (CuPc) films were grown heteroepitaxially on a cleaved face of MoS2 under high vacuum of ca. 4×10-9 torr by a newly developed organic molecular beam epitaxy technique. The RHEED pattern revealed that epitaxially grown CuPc has its own lattice constant, which is completely different from that of MoS2 even at the initial deposition stage.