Resonant photothermal bending spectroscopy at variable temperature 25–150 °C and its application to hydrogenated microcrystalline silicon films
Resonant photothermal bending spectroscopy at variable temperature 25–150 °C and its application to hydrogenated microcrystalline silicon films
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25-150℃变温共振光热弯曲光谱及其在氢化微晶硅薄膜中的应用
DOI：
10.1063/1.1517152
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发表时间：
2003
影响因子：
1.6
通讯作者：
S. Nonomura
中科院分区：
文献类型：
--
作者：
T. Kunii;K. Mori;T. Kiriyama;Junichi Kitao;N. Yoshida;S. Nonomura
建立了不同测量温度下的共振光热弯曲光谱（RPBS），用于估计薄膜半导体的吸收系数（α）光谱。实验得到的RPBS的灵敏度比非共振PBS高10倍左右。在真空条件下，测量温度为25 ~ 150℃的氢化微晶硅（μc-Si:H）薄膜的α谱。结果表明，硅微晶引起的1.2 ~ 1.8 eV间接光吸收的温度系数与单晶硅几乎相同，而隙下吸收强度的温度系数为负。讨论了温度系数为负的原因和局域态的能级导致下面的间隙吸收。
Resonant photothermal bending spectroscopy (RPBS) at various measurement temperatures has been developed for estimating absorption coefficient (α) spectra of thin film semiconductors. The experimentally obtained sensitivity of RPBS was about ten times larger than nonresonant PBS. In vacuum, this technique has been applied to estimate the α spectrum of hydrogenated microcrystalline silicon (μc-Si:H) films at the measurement temperatures from 25 to 150 °C. It is demonstrated that the temperature coefficient of an indirect optical absorption at 1.2–1.8 eV caused by Si microcrystallite is almost the same as that of single crystalline silicon, and the temperature coefficient of below-gap absorption intensity is negative. The reason for the negative temperature coefficient and the energy level of the localized state resulting in the below gap absorption are discussed.