SOLID SOLUBILITY OF NITROGEN IN AMORPHOUS CARBON FILMS DEPOSITED IN ELECTRON CYCLOTRON RESONANCE PLASMA
SOLID SOLUBILITY OF NITROGEN IN AMORPHOUS CARBON FILMS DEPOSITED IN ELECTRON CYCLOTRON RESONANCE PLASMA
复制标题
电子回旋共振等离子体沉积非晶碳膜中氮的固溶度
DOI:
10.1143/jjap.37.4983
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发表时间:
1998
影响因子:
1.5
通讯作者:
S. Ohshio
中科院分区:
文献类型:
--
作者:
H. Saitoh;Tohru Inoue;S. Ohshio
Electron cyclotron resonance plasma is used in the formation of nitrogen-containing carbon films with a CH4+N2 gas mixture. To accelerate cations from the plasma room, rf-induced negative dc bias voltage is applied to the Si substrate. An increase in negative bias is effective for implantation of nitrogen, however, the nitrogen fraction saturates at [N]/([N]+[C])=0.09 at 300 V. The results of X-ray photoelectron spectroscopy suggests that the films have the C–N–C bond or nitrogen terminates the carbon dangling bond. In addition, ion acceleration causes a G-band and a D-band to appear on IR spectrum, which would normally appear on the Raman spectrum obtained from typical diamond-like carbon films. Furthermore, the hardness and maximum Young's modulus of nitrogen-containing carbon films are comparable to those of most diamond-like carbon films.