Telecom InP/InGaAs nanolaser array directly grown on (001) silicon-on-insulator
Telecom InP/InGaAs nanolaser array directly grown on (001) silicon-on-insulator
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DOI：
10.1364/ol.44.000767
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发表时间：
2019-02-15
期刊：
影响因子：
3.6
通讯作者：
Lau, Kei May
中科院分区：
文献类型：
--
作者：
Han, Yu;Ng, Wai Kit;Lau, Kei May
一个紧凑的，高效的，单片生长的III-V族激光源提供了一个有吸引力的替代键合芯片外激光器的硅光子学研究。尽管最近在（001）Si晶片上使用厚变质缓冲层的微激光器的演示令人鼓舞，但将激光器足迹缩小到纳米级并在电信波长下操作纳米激光器仍然是重大挑战。在这里，我们报告了一个单片集成的面内InP/InGaAs纳米激光器阵列（001）绝缘体上硅（SOI）平台上的发射波长覆盖整个C波段（1.55 pm）。在（001）SOI衬底上，采用选区生长法在高质量InP纳米脊中嵌入多个InGaAs量子威尔斯阱。结合空气包层InP/Si光学腔，通过光刻确定不同的腔长，实现了室温下多个通信波段的工作。在（001）SOI平台上演示电信波长单片纳米激光器是迈向完全集成Si光子电路的重要一步。(C)2019美国光学学会
A compact, efficient, and monolithically grown III-V laser source provides an attractive alternative to bonding off-chip lasers for Si photonics research. Although recent demonstrations of microlasers on (001) Si wafers using thick metamorphic buffers are encouraging, scaling down the laser footprint to nanoscale and operating the nanolasers at telecom wavelengths remain significant challenges. Here, we report a monolithically integrated in-plane InP/InGaAs nanolaser array on (001) silicon-on-insulator (SOI) platforms with emission wavelengths covering the entire C band (1.55 pm). Multiple InGaAs quantum wells are embedded in high-quality InP nanoridges by selective-area growth on patterned (001) SOI. Combined with air-cladded InP/Si optical cavities, room-temperature operation at multiple telecom bands is obtained by defining different cavity lengths with lithography. The demonstration of telecom-wavelength monolithic nanolasers on (001) SOI platforms presents an important step towards fully integrated Si photonics circuits. (C) 2019 Optical Society of America