Microfabrication of Si and GaAs by Plasma Etching Process Using Bacterial Cells as an Etching Mask Material
Microfabrication of Si and GaAs by Plasma Etching Process Using Bacterial Cells as an Etching Mask Material
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使用细菌细胞作为蚀刻掩模材料通过等离子体蚀刻工艺微加工 Si 和 GaAs
DOI：
10.1143/jjap.51.087001
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
A. Matsutani and A. Takada
中科院分区：
文献类型：
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作者：
吉岡弥生;浅尾勝哉;A. Matsutani and A. Takada
我们证明，细菌细胞可以用作掩模材料的GaAs和Si的微细加工的Cl2电感耦合等离子体（ICP）蚀刻工艺。大肠杆菌细胞的蚀刻速率类似于电子束抗蚀剂或纳米压印抗蚀剂的蚀刻速率。我们还证明了细菌细胞的降解，通过低压等离子体处理，使用O 2，Ar，空气和H 2 O去除细菌细胞作为蚀刻掩模材料。在低压放电等离子体中的离子有效地降解细菌细胞。所提出的使用细菌细胞的工艺可以预期应用于半导体干法蚀刻工艺。
We demonstrated that bacterial cells can be used as a mask material for microfabrication of GaAs and Si by a Cl 2 inductively coupled plasma (ICP) etching process. The etching rate of Escherichia coli cells was similar to that of electron beam resist or nanoimprint resist. We also demonstrated the degradation of bacterial cells by low-pressure plasma treatment using O 2, Ar, air, and H 2 O for removal of bacterial cells as the etching mask material. Bacterial cells were efficiently degraded by ions in the low-pressure discharge plasma. The proposed process using bacterial cells can be expected to be applied to semiconductor dry etching processes.