Theory of reduced built-in polarization field in nitride-based quantum dots
Theory of reduced built-in polarization field in nitride-based quantum dots
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DOI：
10.1103/physrevb.82.033411
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发表时间：
2010-07-27
影响因子：
3.7
通讯作者：
O'Reilly, E. P.
中科院分区：
文献类型：
--
作者：
Schulz, S.;O'Reilly, E. P.
利用表面积分方法，研究了在[0001]方向沿着生长的InGaN/GaN量子点（QD）中的极化势与在相同高度的量子阱（QW）中的极化势相比有很大的降低.我们使用简单的解析表达式和不同的点的几何形状来表明，减少源于两个效果（i）减少在量子点[0001]表面积和（ii）应变重新分布在量子点系统。因此，与QW相比，QD中的In成分可以增加，从而能够在InGaN QD结构中有效地复合到更长的波长。
We use a surface integral method to show that the polarization potential in an InGaN/GaN quantum dot (QD) grown along the [0001] direction is strongly reduced compared to that in a quantum well (QW) of the same height. We use simple analytic expressions and different dot geometries to show that the reduction originates from two effects (i) the reduction in the QD [0001] surface area and (ii) strain redistributions in the QD system. The In composition can therefore be increased in a QD compared to a QW, enabling efficient recombination to longer wavelengths in InGaN QD structures.