Efficient controlled-phase gate for single-spin qubits in quantum dots

Efficient controlled-phase gate for single-spin qubits in quantum dots
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DOI:
10.1103/physrevb.83.121403
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发表时间:
2011-03-10
期刊:
影响因子:
3.7
通讯作者:
Vandersypen, L. M. K.
Vandersypen, L. M. K.
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Meunier, T.;Calado, V. E.;Vandersypen, L. M. K.

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双量子比特相互作用是量子信息处理的核心。对于半导体量子点中的单自旋量子比特,交换门一直被认为是自然的双量子比特门。最近在耦合量子点系统中集成磁场或g因子梯度,从而可以一步实现受控相位(C相位)门。我们分析了在现实条件下可以获得的C相门持续时间和精确度,包括电荷和核场波动的影响,并发现门错误概率低于10(-4),可能允许容错量子计算。
Two-qubit interactions are at the heart of quantum information processing. For single-spin qubits in semiconductor quantum dots, the exchange gate has always been considered the natural two-qubit gate. The recent integration of a magnetic field or g-factor gradients in coupled quantum dot systems allows for a one-step, robust realization of the controlled-phase (C-phase) gate instead. We analyze the C-phase gate durations and fidelities that can be obtained under realistic conditions, including the effects of charge and nuclear field fluctuations, and find gate error probabilities of below 10(-4), possibly allowing fault-tolerant quantum computation.