Deposition and characterization for high-quality Ti-Ni-Cu thin films with higher Cu content
Deposition and characterization for high-quality Ti-Ni-Cu thin films with higher Cu content
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高铜含量高质量 Ti-Ni-Cu 薄膜的沉积和表征
DOI：
10.1007/s12598-020-01489-z
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发表时间：
2021
期刊：
影响因子：
8.8
通讯作者：
Ma Yuehui
中科院分区：
文献类型：
--
作者：
Li Jun;Yi Xiaouang;Zheng Yu;Wang Jing;Wang Haizhen;Meng Xianglong;Gao Zhiyong;Ma Yuehui
为了获得高质量的Ti-Ni-Cu薄膜，采用直流磁控溅射法在不同工艺条件下制备了Ti-Ni-Cu薄膜，并利用扫描电子显微镜（SEM）、X射线衍射仪（XRD）和拉伸试验对薄膜的表面形貌、化学成分和力学性能进行了表征。基片类型、Ar气压和溅射功率对Ti-Ni-Cu薄膜的质量和化学成分有显著影响。与Si和SiO2载玻片相比，采用玻璃或压电陶瓷载玻片更容易获得自支撑薄膜。在较低的沉积压力（0.10 Pa）下沉积的Ti-Ni-Cu薄膜具有较好的致密度。在0.36Pa的Ar气压下制备的Ti-Ni-Cu薄膜表面具有多孔结构。退火后的Ti-Ni-Cu薄膜的抗拉强度和应变随Ar气压的降低而不断增加。较高的密度有助于获得优异的上级机械性能。沉积速率随Ar气压和溅射功率的增加先增大后减小。通过改变溅射功率可以调节沉积的Ti-Ni-Cu薄膜的成分。不同工艺条件下沉积的Ti-Ni-Cu薄膜均为非晶态。总之，本研究为制备更高质量和性能的Ti-Ni-Cu薄膜提供了重要的理论依据。图形摘要
AbstractIn order to attain high-quality Ti–Ni–Cu film, the surface morphologies, chemical compositions and mechanical properties of Ti–Ni–Cu thin films prepared by direct current (DC) magnetron sputtering at various processes were characterized by scanning electron microscopy (SEM), X-ray diffractometer (XRD) and tensile tests. The type of substrates, Ar pressure and sputtering power had significant effects on the quality and chemical composition of Ti–Ni–Cu thin film. Compared with Si and SiO2slides, it was easier to obtain freestanding films by adopting glass or piezoid slide as substrates. The Ti–Ni–Cu thin film deposited at lower pressure (0.10 Pa) had a better density. The surface was featured with porous structure in the Ti–Ni–Cu thin film prepared by higher Ar pressure of 0.36 Pa. In addition, both the tensile strength and strain of annealed Ti–Ni–Cu thin film continuously increased with Ar pressure decreasing. Higher density contributed to the superior mechanical properties. The deposition rate firstly increased and then decreased with Ar pressure and sputtering power increasing. The composition of deposited Ti–Ni–Cu film can be tailored by changing sputter power. The deposited Ti–Ni–Cu thin films at different processing parameters were in amorphous state. In short, the present study offered the important theoretical basis for the preparation of Ti–Ni–Cu thin film with higher quality and performance.Graphic abstract