Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers
Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers
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DOI：
10.1109/3.753669
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发表时间：
1999-04-01
影响因子：
2.5
通讯作者：
Rosenzweig, J
中科院分区：
文献类型：
--
作者：
Esquivias, I;Weisser, S;Rosenzweig, J
研究了载流子捕获和再发射对量子阱激光二极管电阻抗、等效电路和调制响应的影响。电阻抗是与载流子捕获/输运和载流子再发射相关的时间常数的敏感函数。我们将理论结果与采用相同横向结构的不同薄膜结构制备的高速InGaAs-GaAs多量子阱激光器的电阻抗测量值进行了比较。实验结果与理论模型吻合较好，可以提取量子阱中的有效载流子逃逸时间和有效载流子寿命，并估计有效载流子捕获/输运时间。
We investigate the effects of carrier capture and re-emission on the electrical impedance, equivalent circuit, and modulation response of quantum-well (QW) laser diodes. The electrical impedance is shown to be a sensitive function of the time constants associated with carrier capture/transport and carrier re-emission. We compare the theoretical results with measured values of the electrical impedance of high-speed InGaAs-GaAs multiple-quantum-well lasers fabricated using different epilayer structures with a common lateral structure. The experimental results agree well with the theoretical model, allowing us to extract the effective carrier escape time and the effective carrier lifetime in the QW's, and to estimate the effective carrier capture/transport time.