Depth profiling of phosphorus in photonic-grade silicon using laser-induced breakdown spectrometry
Depth profiling of phosphorus in photonic-grade silicon using laser-induced breakdown spectrometry
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DOI：
10.1366/0003702981943662
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发表时间：
1998-03-01
影响因子：
3.5
通讯作者：
Laserna, JJ
中科院分区：
文献类型：
--
作者：
Milan, M;Lucena, P;Laserna, JJ
利用激光诱导击穿光谱（LIBS）对硅中磷掺杂的深度分布进行了研究。通过将Nd：YAG激光（在第二谐波，532 nm下操作）聚焦在样品表面上形成激光等离子体。等离子体发射被收集，分散，并使用电荷耦合器件（CCD）检测。优化了延迟时间和样品相对于激光焦点的位置等实验参数，提高了磷谱线发射的信背比。示出了具有不同磷扩散步骤的样品的LIBS扩散曲线。测得每个脉冲的火山口深度和每个脉冲的烧蚀质量分别为1.2 μ m脉冲（-1）和50 ng脉冲（-1）。每个脉冲的深度的知识允许的P扩散层的厚度的估计。
Laser-induced breakdown spectrometry (LIBS) has been evaluated for depth profiling of phosphorus doping in silicon. Laser plasmas were formed by focusing a Nd:YAG laser (operating in the second harmonic, 532 nm) on the sample surface. Plasma emission was collected, dispersed, and detected with the use of a charge-coupled device (CCD). Experimental parameters, such as delay time and sample position relative to the laser focal point, were optimized to improve the signal-to-background ratio of phosphorus line emission. Diffusion profiles by LIBS of samples with different phosphorus diffusion steps are shown. Crater depth per pulse and ablated mass per pulse were measured to be 1.2 mu m pulse(-1) and 50 ng pulse(-1), respectively. The knowledge of depth per pulse permitted the estimation of thickness of the P diffusion layer.