L-valley electron g-factor in bulk GaAs and AlAs
L-valley electron g-factor in bulk GaAs and AlAs
复制标题
块状 GaAs 和 AlAs 中的 L 谷电子 g 因子
DOI：
10.1063/1.2986151
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发表时间：
2008-09-15
影响因子：
3.2
通讯作者：
Wu, M. W.
中科院分区：
文献类型：
--
作者：
Shen, K.;Weng, M. Q.;Wu, M. W.
本文用三带k中心点p模型和紧束缚模型研究了GaAs和AlAs体材料L谷区传导电子的Lande g因子。我们发现L谷g因子是高度各向异性的，并且可以由两个分量g（垂直于）和g（平行于中心点）来表征g（垂直于）接近自由电子Lande因子，但是g（平行于）强烈地受远程带的影响。远程频带对g（平行于）的贡献取决于如何处理远程频带。然而，当磁场处于实验中广泛使用的Voigt位形时，不同的模型给出几乎相同的g因子。(C)2008年美国物理学会。[DOI：10.1063/1.2986151]
We study the Lande g-factor of conduction electrons in the L-valley of bulk GaAs and AlAs by using a three-band k center dot p model together with the tight-binding model. We find that the L-valley g-factor is highly anisotropic and can be characterized by two components g(perpendicular to) and g(parallel to center dot) g(perpendicular to) is close,to the free electron Lande factor but g(parallel to) is strongly affected by the remote bands. The contribution from remote bands on g(parallel to) depends on how the remote bands are treated. However, when the magnetic field is in the Voigt configuration, which is widely used in the experiments, different models give almost identical g-factor. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2986151]